2N7002, 235
Product Overview
The 2N7002, 235 is a small signal N-channel MOSFET transistor. It falls under the category of electronic components and is commonly used in various electronic circuits for switching and amplification purposes. The 2N7002, 235 features low on-state resistance, high speed switching, and low threshold voltage. It is typically available in a SOT-23 package and is sold in tape and reel packaging.
Specifications
- Drain-Source Voltage (VDSS): 60V
- Continuous Drain Current (ID): 115mA
- On-State Resistance (RDS(on)): 5 Ohms
- Threshold Voltage (VGS(th)): 1-2.5V
- Package Type: SOT-23
Pin Configuration
The 2N7002, 235 has three pins: Gate (G), Drain (D), and Source (S). The pinout configuration is as follows: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source
Functional Features
The 2N7002, 235 offers fast switching speeds, making it suitable for applications requiring rapid on/off transitions. It also exhibits low power consumption and can operate at low voltages, making it ideal for battery-powered devices.
Advantages and Disadvantages
Advantages: - Fast switching speed - Low on-state resistance - Low threshold voltage - Small form factor
Disadvantages: - Limited maximum drain-source voltage - Limited continuous drain current
Working Principles
When a positive voltage is applied to the gate terminal with respect to the source, the transistor allows current to flow between the drain and source terminals. Conversely, when the gate voltage is removed or reduced below the threshold voltage, the transistor turns off, effectively interrupting the current flow.
Application Field Plans
The 2N7002, 235 finds applications in various electronic circuits such as: - Switching circuits - Amplifier circuits - LED driver circuits - Battery management systems
Alternative Models
Some alternative models to the 2N7002, 235 include: - BS170 - IRF530 - FQP30N06L
In conclusion, the 2N7002, 235 is a versatile N-channel MOSFET transistor with fast switching characteristics, making it suitable for a wide range of electronic applications.
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What is the 2N7002,235 transistor used for?
- The 2N7002 and 2N7000 are N-channel enhancement mode field-effect transistors (FETs) commonly used for switching and amplification in low-power applications.
What are the typical applications of the 2N7002,235 transistor?
- The 2N7002,235 transistors are often used in applications such as small signal amplification, low power switching, level shifting, and interface circuits.
What is the maximum drain-source voltage for the 2N7002,235 transistor?
- The maximum drain-source voltage for the 2N7002,235 transistor is typically around 60V.
What is the maximum drain current for the 2N7002,235 transistor?
- The maximum drain current for the 2N7002,235 transistor is typically around 200mA.
What are the key differences between the 2N7002 and 2N7000 transistors?
- The 2N7002 has a lower threshold voltage and higher drain current compared to the 2N7000, making it suitable for certain low-voltage applications.
Can the 2N7002,235 be used for level shifting in digital circuits?
- Yes, the 2N7002,235 transistors can be used for level shifting in digital circuits due to their low threshold voltage and compatibility with low-voltage signals.
Are there any specific considerations for driving capacitive loads with the 2N7002,235 transistor?
- When driving capacitive loads, it's important to consider the gate-source capacitance of the transistor to ensure proper switching behavior and avoid potential oscillations.
What are the typical operating temperature ranges for the 2N7002,235 transistor?
- The 2N7002,235 transistors are typically rated for operation within the -55°C to 150°C temperature range.
Can the 2N7002,235 be used in audio amplifier circuits?
- While the 2N7002,235 transistors can be used in low-power audio amplifier circuits, they are more commonly employed in small signal amplification rather than high-power audio applications.
What are some common pitfalls to avoid when using the 2N7002,235 in technical solutions?
- It's important to avoid exceeding the maximum ratings for voltage, current, and power dissipation, as well as ensuring proper biasing and understanding the limitations of the transistor in different circuit configurations.